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Saratoga, CA, United States of America

Farhad K Moghadam

USPTO Granted Patents = 55 (Patent Applications = 3)

Average Co-Inventor Count = 5.1

ph-index = 27

Forward Citations = 4,311(Granted Patents)

Forward Citations (Not Self Cited) = 4,264(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Los Gatos, CA (US) (1993 - 2009)
Saratoga, CA (US) (2002 - 2023)

Company Filing History:

47 out of 13,713

Applied Materials, Inc.

8 out of 54,750

Intel Corporation

Years Active: 1993-2024

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Areas of Expertise:

Radio Frequency Impedance Matching

Plasma Enhanced Processes

Dielectric Film Gapfill

E-Beam Treatment

Low Dielectric Constant Films

High Aspect Ratio Trenches

Chemical Vapor Deposition

Barrier Layer Adhesion

Moisture Resistance

Inductively Coupled Plasma

Silicon Carbide Deposition

Liquid Precursor Coating

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12136537 - Cost effective radio frequency impedance matching networks (2024-11-05),

2. 11631583 - RF power source operation in plasma enhanced processes (2023-04-18),

3. 7799698 - Deposition-selective etch-deposition process for dielectric film gapfill (2010-09-21),

4. 7691753 - Deposition-selective etch-deposition process for dielectric film gapfill (2010-04-06),

5. 7560377 - Plasma processes for depositing low dielectric constant films (2009-07-14),

6. 7514353 - Contact metallization scheme using a barrier layer over a silicide layer (2009-04-07),

7. 7431585 - Apparatus and method for heating substrates (2008-10-07),

8. 7399388 - Sequential gas flow oxide deposition technique (2008-07-15),

9. 7381052 - Apparatus and method for heating substrates (2008-06-03),

10. 7256139 - Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices (2007-08-14),

11. 7227244 - Integrated low k dielectrics and etch stops (2007-06-05),

12. 7160821 - Method of depositing low k films (2007-01-09),

13. 7151053 - Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications (2006-12-19),

14. 7097886 - Deposition process for high aspect ratio trenches (2006-08-29),

15. 7081414 - Deposition-selective etch-deposition process for dielectric film gapfill (2006-07-25),

Title: The Inventor Farhad K Moghadam

Introduction: Farhad K Moghadam is a renowned inventor based in Saratoga, CA (US) known for his groundbreaking contributions to various fields.

Latest Patents: Farhad K Moghadam holds several patents in the areas of technology and healthcare, showcasing his innovative mindset and problem-solving abilities.

Career Highlights: With a career spanning over two decades, Farhad K Moghadam has worked with leading tech companies, bringing to life cutting-edge inventions that have revolutionized industries.

Collaborations: Throughout his career, Farhad K Moghadam has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all his projects.

Conclusion: Farhad K Moghadam's passion for innovation and his relentless drive to push boundaries have solidified his position as a pioneering inventor in the modern era.

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