The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Oct. 28, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Abhishek Mandal, Thane, IN;

Nitin Deepak, Thane, IN;

Geetika Bajaj, Mumbai, IN;

Ankur Kadam, Thane, IN;

Gopi Chandran Ramachandran, Mumbai, IN;

Suraj Rengarajan, Bangalore, IN;

Farhad K. Moghadam, Saratoga, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Srinivas M. Satya, Cupertino, CA (US);

Manish Hemkar, Singapore, SG;

Vijay Tripathi, Mumbai, IN;

Darshan Thakare, Palghar, IN;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 70/00 (2026.01); H10P 14/60 (2026.01); H10P 14/69 (2026.01);
U.S. Cl.
CPC ...
H10P 70/23 (2026.01); H10P 14/6326 (2026.01); H10P 14/6681 (2026.01); H10P 14/6903 (2026.01);
Abstract

Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.


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