The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jan. 27, 2004
Tzu-fang Huang, San Jose, CA (US);
Yung-cheng LU, Taipei, TW;
Li-qun Xia, San Jose, CA (US);
Ellie Yieh, San Jose, CA (US);
Wai-fan Yau, Mountain View, CA (US);
David W. Cheung, Foster City, CA (US);
Ralf B. Willecke, Santa Clara, CA (US);
Kuowei Liu, Campbell, CA (US);
Ju-hyung Lee, Campbell, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Yeming Jim MA, Santa Clara, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Yung-Cheng Lu, Taipei, TW;
Li-Qun Xia, San Jose, CA (US);
Ellie Yieh, San Jose, CA (US);
Wai-Fan Yau, Mountain View, CA (US);
David W. Cheung, Foster City, CA (US);
Ralf B. Willecke, Santa Clara, CA (US);
Kuowei Liu, Campbell, CA (US);
Ju-Hyung Lee, Campbell, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Yeming Jim Ma, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.