Applied Materials, Inc.

Intel Corporation

Farhad K Moghadam

David Wingto Cheung

Wai-Fan Yau

Yung-Cheng Lu

Michael S Barnes

Ralf B Willecke

Tetsuya Ishikawa

Robert Parkash Mandal

Shin-Puu Jeng

Kuo-Wei Liu

Tze Wing Poon

Li-Qun Xia

Kuowei Liu

Ellie Y Yieh

Timothy Weidman

Thanh Ngoc Pham

Ju-Hyung Lee

Hichem M'Saad

Padmanabhan Krishnaraj

Gerald Z Yin

Yunsang Kim

Jun Zhao

Judy H Huang

Claes H Bjorkman

Tzu-Fang Huang

Rick J Roberts

Zhuang Li

Nasreen Gazala Chopra

Dennis J Yost

Betty Tang

Hongquing Shan

Nasreen Gazala Chapra

Srinivas D Nemani

Shankar Venkataraman

Dan Maydan

Ashok K Sinha

Lin Zhang

Xiaolin C Chen

DongQing Li

Brett E Huff

Yeming Jim Ma

Min Melissa Yu

Alexandros T Demos

Michael Santiago Cox

Yi Zheng

David H Quach

Yaxin Wang

Mansour Moinpour

Manoj Vellaikal

Ping Xu

Dana Tribula

Sameer Desai

Te Hua Lin

William G Petro

Fei Han

Kangsub Yim

Kartik Ramaswamy

Yang Yang

Fred Conrad Redeker

Michael Xiaoxuan Yang

Anchuan Wang

John Patrick Holland

Hiroji Hanawa

Chi-I Lang

Shijian Li

Alexander Miller Paterson

Zhenjiang Cui

Hari K Ponnekanti

Yue Guo

Arulkumar P Shanmugasundram

Dmitry A Dzilno

Siamak Salimian

Brian C Lue

Frederic Gaillard

Seon-Mee Cho

M Ziaul Karim

Turgut Sahin

Kapila P Wijekoon

Dian Sugiarto

Robert J Steger

Amit Khandelwal

Yunfeng Lu

Valentin N Todorov

Huong Thanh Nguyen

Zhize Zhu

Michael P Nault

Manus K Wong

Robert R Mandal

Chad Peterson

Fang Mei

S M Sadjadi

Philip E Freiberger

Ragupathy V Giridhar

Paul Matthews

S M Reza Sadjadi

Diana Chan

Yaxin Wong

Avgerinos V (Jerry) Gelatos

Li-Quan Xia

Melissa Min Yu

Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.

Cost effective radio frequency impedance matching networks

Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

RF power source operation in plasma enhanced processes

A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Deposition-selective etch-deposition process for dielectric film gapfill

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Plasma processes for depositing low dielectric constant films

Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

Contact metallization scheme using a barrier layer over a silicide layer

An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

Apparatus and method for heating substrates

A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

Sequential gas flow oxide deposition technique

One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Integrated low k dielectrics and etch stops

A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Method of depositing low k films

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications

A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

Deposition process for high aspect ratio trenches

Growing community of inventors

Saratoga, CA, United States of America

Farhad K Moghadam