Tempe, AZ, United States of America

Edouard De Frésart


Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 63(Granted Patents)


Company Filing History:


Years Active: 2007-2017

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18 patents (USPTO):

Title: Edouard De Frésart: Innovator in Semiconductor Technology

Introduction

Edouard De Frésart is a prominent inventor based in Tempe, AZ (US), known for his significant contributions to semiconductor technology. With a total of 18 patents, he has made remarkable advancements in the field, particularly in the manufacturing of trench semiconductor devices.

Latest Patents

One of his latest patents focuses on methods of manufacturing trench semiconductor devices with edge termination structures. This invention includes embodiments of semiconductor devices and methods for their formation, which involve providing a semiconductor substrate with a top surface, a bottom surface, an active region, and an edge region. The process includes forming a gate structure in a trench within the active region and a termination structure in a second trench located in the edge region. The termination structure features an active region facing side and a device perimeter facing side. Additionally, the method encompasses forming first and second source regions of the first conductivity type adjacent to both sides of the gate structure, along with a third source region adjacent to the active region facing side of the termination structure. This semiconductor device may be a trench metal oxide semiconductor device.

Another notable patent is related to edge termination for trench gate FETs. This semiconductor device comprises a semiconductor layer situated on a substrate, with multiple active cells disposed on the semiconductor layer. Each active cell contains a trench extending into the semiconductor layer and a body region adjacent to the trench's sidewall. The device also includes a termination cell located adjacent to the edge of the active cells, which features a trench and a body region with a different conductivity type than that of the semiconductor layer.

Career Highlights

Throughout his career, Edouard De Frésart has worked with leading companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP USA, Inc. His expertise and innovative approach have significantly impacted the development of advanced semiconductor technologies.

Collaborations

Edouard has collaborated with notable professionals in the field, including Ganming Qin and Robert W. Baird. These collaborations have further enhanced his contributions to semiconductor innovation.

Conclusion

Edouard De Frésart's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His numerous patents and collaborations highlight his significant role in shaping the future of semiconductor devices.

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