The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Aug. 25, 2006
Edouard D. DE Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Edouard D. de Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Means and methods are provided for trench TMOS devices (-), comprising, providing a first semiconductor () of a first composition having an upper surface (), with a body portion () proximate the upper surface (), a drift portion () spaced apart from the upper surface () and a trench () having sidewalls () extending from the upper surface () into the drift portion (). A second semiconductor () adapted to provide a higher mobility layer is applied on the trench sidewalls () where parts () of the body portion () are exposed. A dielectric () covers the higher mobility layer () and separates it from a control gate () in the trench (). Source regions () formed in the body portion () proximate the upper surface () communicate with the higher mobility layer (). When biased, source-drain current () flows from the source regions () through gate induced channels () in the higher mobility layer () and into the drift portion () where it is extracted by a drain () or other connection coupled to the drift portion ().