The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Sep. 22, 2009
Edouard DE Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Edouard de Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Electronic elements () with very low resistance back-side coupling are provided by forming one or more narrow trenches or pipes (), preferably dielectric lined, in front sides () of substrates ('), filling the trenches or pipes with a conductor () having a coefficient of expansion not too different from that of the substrate (′) but of higher conductivity, forming an epitaxial SC layer () over the front side () of the substrate (′) in Ohmic contact with the conductor () in the trenches or pipes (), forming various semiconductor (SC) devices () in the epi-layer (), back grinding the substrate (′) to expose bottoms () of the conductor filled trenches or pipes (), and providing a back-side conductor () contacting the conductor () in the trenches or pipes (). For silicon SCs, tungsten is a suitable conductor () for filling the trenches or pipes () to minimize substrate stress. Series ON-resistance of the elements () due to the substrate resistance is substantially reduced.