The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Aug. 25, 2006
Edouard D. DE Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Edouard D. de Frésart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Semiconductor structures and methods are provided for a semiconductor device () employing a superjunction structure () and overlying trench () with embedded control gate (). The method comprises, forming (--) interleaved first (----, etc.) and second (---, etc.) spaced-apart regions of first () and second () semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material () has a higher mobility for the same carrier type than the first semiconductor material (), and providing (-) an overlying third semiconductor material () in which a trench () is formed with sidewalls () having thereon a fourth semiconductor material () that has a higher mobility than the third material (), adapted to carry current () between source regions (), through the fourth () semiconductor material in the trench () and the second semiconductor material () in the device drift space () to the drain (). In a further embodiment, the first () and third () semiconductor materials are relaxed materials and the second () and fourth () semiconductor materials are strained semiconductor materials.