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For the Inventor, By the Inventor

Hod Hasharon, Israel

Dror Shemesh

This inventor holds 32 USPTO granted patents and 9 published patent applications and 4 EPO patents, primarily in Semiconductor Inspection. Top assignees: Applied Materials Israel Limited, Applied Materials, Inc., Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dror Shemesh. Retrieved from https://idiyas.com/inventor/dror-shemesh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32 

% Patents Active = 84.4

 

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 179(Granted Patents)


Location History:

  • Rehovot, IL (2007)
  • Petach-Tikva, IL (2005 - 2009)
  • Petah Tikva, IL (2003 - 2010)
  • Hod Hasharon, IL (2007 - 2024)

Company Filing History:

goldMedal28 out of 574 
 
Applied Materials Israel Limited
 patents
silverMedal3 out of 14,502 
 
Applied Materials, Inc.
 patents
bronzeMedal2 out of 168 
 
Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh
 patents
where one patent can have more than one assignee

Years Active: 2003-2026

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Areas of Expertise:
Non-Destructive Testing
X-Ray Measurements
Defect Detection
Process Monitoring
Imaging Techniques
Vacuum Chamber Analysis
Crystalline Defects
Charged Particle Beam
Multiple Detectors
Thin Sample Generation
Energy Spectrum Analysis
Inspection Systems
32 patents (USPTO):Explore Patents
1. 12774968 - Nondestructive estimation of structural properties of a specimen via X-ray modelling based on simulations and ground truth measurements (2026-10-27),
2. 12625098 - Non-destructive classification of specimens based on energy signature measurements (2026-05-12),
3. 12480898 - Z-profiling of wafers based on X-ray measurements (2025-11-25),
4. 11961221 - Defect examination on a semiconductor specimen (2024-04-16),
5. 11543368 - X-ray based evaluation of a status of a structure of a substrate (2023-01-03),
6. 11423529 - Determination of defect location for examination of a specimen (2022-08-23),
7. 11022565 - Process monitoring (2021-06-01),
8. 10928336 - X-ray based evaluation of a status of a structure of a substrate (2021-02-23),
9. 10922809 - Method for detecting voids and an inspection system (2021-02-16),
10. 10347462 - Imaging of crystalline defects (2019-07-09),
11. 9899185 - Resolving ambiguities in an energy spectrum (2018-02-20),
12. 9805909 - Method for detecting voids in interconnects and an inspection system (2017-10-31),
13. 9490101 - System and method for scanning an object (2016-11-08),
14. 8723144 - Apparatus for sample formation and microanalysis in a vacuum chamber (2014-05-13),
15. 8709269 - Method and system for imaging a cross section of a specimen (2014-04-29),

Title: Dror Shemesh: Pioneering Inventor from Hod Hasharon, IL

Introduction: Dror Shemesh is a renowned inventor hailing from Hod Hasharon, Israel, known for his groundbreaking innovations in various fields.

Latest Patents: Dror Shemesh holds several recent patents in the areas of renewable energy technologies, medical devices, and artificial intelligence systems, showcasing his diverse expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Dror Shemesh has worked with leading research institutions and technology companies to develop cutting-edge solutions that have significantly impacted industries worldwide. His contributions to the field of biotechnology have been particularly noteworthy.

Collaborations: Throughout his career, Dror Shemesh has collaborated with top scientists, engineers, and entrepreneurs to bring his inventions to life. His ability to work across disciplines and industries has led to the creation of innovative products that have improved the lives of many.

Conclusion: Dror Shemesh's passion for innovation and his relentless pursuit of excellence have established him as a key figure in the world of inventors. His dedication to pushing the boundaries of what is possible continues to inspire the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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