The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Apr. 17, 2018
Applied Materials Israel Ltd., Rehovot, IL;
Dror Shemesh, Hod Hasharon, IL;
Uri Lev, Mazkeret Batya, IL;
Benjamin Colombeau, San Jose, CA (US);
Amir Wachs, Caesarea, IL;
Kourosh Nafisi, San Jose, CA (US);
Applied Materials Israel Ltd., Rehovot, IL;
Abstract
A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.