Applied Materials Israel Limited

Applied Materials, Inc.

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Applied Materials Isreal Ltd

Dror Shemesh

Gilad Almogy

Jürgen Frosien

Pavel Adamec

Doron Girmonsky

Jacob Levin

Michal Eilon

Eitan Kidron

Dubi Shachal

Benjamin Colombeau

Juergen Frosien

Nicolas L Breil

Boaz Cohen

Yuval Gronau

Ishai Schwarzband

Igor Petrov

Benzion Sender

Dmitry Shur

Alexander Kadyshevitch

Ariel Ben-Porath

Helmut Banzhof

Ran Schleyen

Amir Wachs

Lei Zhong

Adi Boehm

Mor Baram

Michal Avinun-Kalish

Ofir Greenberg

Vadim Kuchik

Uri Lev

Uri Hadar

Yuri Shirman

Kourosh Nafisi

Eugene T Bullock

Ekaterina Rechav

Gurjeet Singh

Eitan Binyamini

Yaniv Brami

Vicky Rashkovan

Rafael Ben Ami

Alexey Stepanov

Miriam Brook

Hen Doozli

A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

Z-profiling of wafers based on X-ray measurements

There is provided a system and method of runtime defect examination of a semiconductor specimen, comprising obtaining a first image representative of at least part of the semiconductor specimen, the first image acquired by an examination tool configured with a first focus plane; estimating whether the first image is in focus using a machine learning (ML) model, wherein the ML model is previously trained for classifying images into focused images and defocused images; upon an estimation that the first image is out of focus, performing focus calibration on the examination tool to select a second focus plane associated with an optimal focus score; and obtaining a second image acquired by the examination tool configured with the second focus plane, and estimating whether the second image is in focus using the ML model. The second image, upon being estimated as being in focus, is usable for defect examination on the specimen.

Defect examination on a semiconductor specimen

A method for x-ray based evaluation of a status of a structure of a substrate, the method may include acquiring an electron image of a region of the substrate, the region comprises the structure; acquiring an x-ray image of the structure; and evaluating the status of the structure, wherein the evaluating is based at least on a number of x-ray photons that were emitted from the structure.

X-ray based evaluation of a status of a structure of a substrate

There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Dinformative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of D, or of data correlated to D, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.

Determination of defect location for examination of a specimen

A method for determining a defect material element, the method includes (a) acquiring, by a charged particle beam system and by applying a spectroscopy process, an electromagnetic emission spectrum of a part of a defect; (b) acquiring, by the charged particle beam system, a backscattered electron (BSE) image of an area that includes the defect; and (c) determining a defect material element. The determining of the defect material element includes: determining whether an ambiguity exists in the electromagnetic emission spectrum, and resolving the ambiguity based on the BSE image, when it is determined that the ambiguity exists.

Process monitoring

A method for detecting voids in a metal line of a semiconductor device die includes: scanning an electron beam upon a selected location on the die containing the metal line; determine gray levels in an image produced by collected electrons of the electron beam backscattered from the selected location on the die; and identifying one or more voids in the metal line based on differences between the gray levels in the image.

Method for detecting voids and an inspection system

A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.

Imaging of crystalline defects

A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.

Resolving ambiguities in an energy spectrum

An inspection system that includes charged particle optics that irradiate a bottom of a hole with a charged particle beam propagated along an optical axis, an energy dispersive x-ray detector and a processor. The x-ray detector detects x-ray photons emitted from the bottom of the hole and generates detection signals indicative of the x-ray photons. The processor processes the detection signals to provide an estimate of the bottom of the hole.

Method for detecting voids in interconnects and an inspection system

A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.

System and method for scanning an object

An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Apparatus for sample formation and microanalysis in a vacuum chamber

A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, in which the cross section comprises at least one first portion made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are performed while the specimen is placed in a vacuum chamber.

Method and system for imaging a cross section of a specimen

A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Method for monitoring chamber cleanliness

A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter, and an interface to an electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

Method and system for providing a compensated auger spectrum

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Hod Hasharon, Israel

Dror Shemesh