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Douglas J Bonser

This inventor holds 32 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Advanced Micro Devices Corporation, Globalfoundries Inc., Sematech, Inc.. Active years: 1996-2013.

USPTO Granted Patents = 32 (Patent Applications = 1)

% Patents Active = 78.1

EPO Patents = 1

Average Co-Inventor Count = 3.2

ph-index = 12

Forward Citations = 918(Granted Patents)

Location History:

Hsin-Chu, TW (2005)
Austin, TX (US) (1996 - 2007)
Hopewell Junction, NY (US) (2006 - 2013)

Company Filing History:

27 out of 13,151

Advanced Micro Devices Corporation

Years Active: 1996-2013

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Areas of Expertise:

FinFET Technology

Semiconductor Fabrication

Gate Spacer Formation

Selective Epitaxial Growth

Alignment Features

Photoresist Trim Detection

Amorphous Carbon Materials

Critical Dimension Control

Shallow Trench Isolation

CVD Silicon Carbide

Defect Reduction

Gate Line Dimension Reduction

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8525234 - Formation of FinFET gate spacer (2013-09-03),

2. 8268727 - Methods for fabricating FinFET semiconductor devices using planarized spacers (2012-09-18),

3. 8174055 - Formation of FinFET gate spacer (2012-05-08),

4. 7985639 - Method for fabricating a semiconductor device having a semiconductive resistor structure (2011-07-26),

5. 7504326 - Use of scanning theme implanters and annealers for selective implantation and annealing (2009-03-17),

6. 7279386 - Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions (2007-10-09),

7. 7268066 - Method for semiconductor gate line dimension reduction (2007-09-11),

8. 7223698 - Method of forming a semiconductor arrangement with reduced field-to active step height (2007-05-29),

9. 7144785 - Method of forming isolation trench with spacer formation (2006-12-05),

10. 7105399 - Selective epitaxial growth for tunable channel thickness (2006-09-12),

11. 7091106 - Method of reducing STI divot formation during semiconductor device fabrication (2006-08-15),

12. 6979651 - Method for forming alignment features and back-side contacts with fewer lithography and etch steps (2005-12-27),

13. 6913958 - Method for patterning a feature using a trimmed hardmask (2005-07-05),

14. 6900139 - Method for photoresist trim endpoint detection (2005-05-31),

15. 6893967 - L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials (2005-05-17),

Title: The Innovative Journey of Douglas J Bonser

Introduction:

Douglas J Bonser, a talented inventor based in Austin, Texas, has made significant contributions to the field of technology through his creative and groundbreaking inventions.

Latest Patents:

Douglas J Bonser holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices, showcasing his versatility and innovative spirit.

Career Highlights:

With a background in engineering and a passion for problem-solving, Douglas J Bonser has successfully brought several of his inventions from concept to reality, revolutionizing industries and improving people's lives.

Collaborations:

Throughout his career, Douglas J Bonser has collaborated with leading tech companies, research institutions, and universities to further develop and commercialize his inventions, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion:

In conclusion, Douglas J Bonser's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with his work continuing to inspire future generations of innovators.

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