The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 03, 2004
Mark C. Kelling, Marlboro, NY (US);
Douglas Bonser, Hopewell Junction, NY (US);
Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);
Asuka Nomura, Poughkeepsie, NY (US);
Mark C. Kelling, Marlboro, NY (US);
Douglas Bonser, Hopewell Junction, NY (US);
Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);
Asuka Nomura, Poughkeepsie, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for forming spacers of specific dimensions on a polysilicon gate electrode protects the sidewalls of the polysilicon gate electrode during selective epitaxial growth. The spacers, whether asymmetric or symmetric, are precisely defined by using the same specific exposure tool, such as a 193 nm wavelength step and scan exposure tool, and the same pattern reticle, in both the defining of the polysilicon gate electrode pattern and the pattern spacer, while employing tight alignment specifications.