The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jan. 13, 2004
Marilyn I. Wright, Sunnyvale, CA (US);
Douglas J. Bonser, Austin, TX (US);
LU You, San Jose, CA (US);
Kay Hellig, Dresden, DE;
Marilyn I. Wright, Sunnyvale, CA (US);
Douglas J. Bonser, Austin, TX (US);
Lu You, San Jose, CA (US);
Kay Hellig, Dresden, DE;
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A multilayer L-shaped spacer is formed of a lower portion comprising a CVD organic material or amorphous carbon, and an upper portion comprised of a protective material. The upper portion is patterned using a photoresist mask. During that patterning, the underlying substrate is protected by a layer of CVD organic material or amorphous carbon. The CVD organic material or amorphous carbon is then patterned using the patterned protective material as a mask. The chemistry used to pattern the CVD organic material or amorphous carbon is relatively harmless to the underlying substrate. Alternatively, an L-shaped spacer is patterned without using a photoresist mask by forming an amorphous carbon spacer around a gate that is covered with a conformal layer of a conventional spacer material. The conventional spacer material is patterned using the amorphous carbon spacer as an etch mask. The amorphous carbon spacer is easily formed without the need for lithographic patterning, and therefore this method is preferable to methods using photoresist masks.