The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Mar. 04, 2004
Douglas J. Bonser, Hopewell Junction, NY (US);
Johannes F. Groschopf, Fishkill, NY (US);
Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);
John G. Pellerin, Hopewell Jct, NY (US);
Jon D. Cheek, Wallkill, NY (US);
Douglas J. Bonser, Hopewell Junction, NY (US);
Johannes F. Groschopf, Fishkill, NY (US);
Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);
John G. Pellerin, Hopewell Jct, NY (US);
Jon D. Cheek, Wallkill, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin nitride polish stop layer is retained in place during subsequent masking, implanting and cleaning steps to form dopant regions, and is removed prior to gate oxide and gate electrode formation.