The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Feb. 14, 2003
Applicants:
Marina V. Plat, San Jose, CA (US);
Marilyn I. Wright, Sunnyvale, CA (US);
Chih Yuh Yang, San Jose, CA (US);
Douglas J. Bonser, Austin, TX (US);
Inventors:
Marina V. Plat, San Jose, CA (US);
Marilyn I. Wright, Sunnyvale, CA (US);
Chih Yuh Yang, San Jose, CA (US);
Douglas J. Bonser, Austin, TX (US);
Assignee:
Advanced Micro Devices, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L021/84 ; H01L021/3205 ; H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
In the formation of a semiconductor device, one or more hardmasks are formed during a process for patterning a device feature. One or more of the hardmasks is subjected to an isotropic etch to trim the hardmask prior to patterning an underlying layer. The trimmed hardmask layer is preferably an amorphous carbon layer.