The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2011

Filed:

Sep. 18, 2009
Applicants:

Frank Scott Johnson, Wappingers Falls, NY (US);

Douglas Bonser, Hopewell Junction, NY (US);

Inventors:

Frank Scott Johnson, Wappingers Falls, NY (US);

Douglas Bonser, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods are provided for fabricating a semiconductor device. A method forms a conductive fin arrangement on a first region of a semiconductor substrate. The method continues by forming a semiconductive resistor structure on a second region of the semiconductor substrate after forming the conductive fin arrangement, and forming a gate stack foundation structure overlying the conductive fin arrangement after forming the semiconductive resistor structure. The method removes portions of the gate stack foundation structure overlying the first region of the semiconductor substrate to define a gate structure for the semiconductor device.


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