Enter inventor name

Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 276(Granted Patents)

Location History:

Richardson, TX (US) (2000 - 2011)
Wappinger Falls, NY (US) (2011 - 2014)
Wappingers Falls, NY (US) (2010 - 2016)
Saratoga Spring, NY (US) (2016)
Saratoga Springs, NY (US) (2021)

Company Filing History:

19 out of 29,263

Texas Instruments Corporation

Advanced Micro Devices Corporation

patents

4. 1 out of 164,197

International Business Machines Corporation

patents

5. 1 out of 2,870

Stmicroelectronics Gmbh

patents

6. 1 out of 941

Globalfoundries U.S. Inc.

patents

7. 1 out of 1,020

Globalfoundries Singapore Pte. Ltd.

patents

where one patent can have more than one assignee

Years Active: 2000-2021

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Areas of Expertise:

Semiconductor Devices

FinFET Technology

Integrated Circuits

Crystal Orientation

Bipolar Transistors

Stress-Inducing Structures

CMOS Processing

Isolation Techniques

Sidewall Spacers

High Breakdown Voltage

Decoupling Capacitors

Hybrid Orientation Technology

40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11195947 - Semiconductor device with doped region adjacent isolation structure in extension region (2021-12-07),

2. 9336345 - Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits (2016-05-10),

3. 9257325 - Semiconductor structures and methods for forming isolation between Fin structures of FinFET devices (2016-02-09),

4. 9123570 - Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates (2015-09-01),

5. 9000534 - Method for forming and integrating metal gate transistors having self-aligned contacts and related structure (2015-04-07),

6. 8912603 - Semiconductor device with stressed fin sections (2014-12-16),

7. 8865596 - Methods for forming semiconductor structures using selectively-formed sidewall spacers (2014-10-21),

8. 8736061 - Integrated circuits having a continuous active area and methods for fabricating same (2014-05-27),

9. 8729609 - Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereof (2014-05-20),

10. 8603893 - Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates (2013-12-10),

11. 8558318 - Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates (2013-10-15),

12. 8404592 - Methods for fabricating FinFET semiconductor devices using L-shaped spacers (2013-03-26),

13. 8383503 - Methods for forming semiconductor structures using selectively-formed sidewall spacers (2013-02-26),

14. 8268727 - Methods for fabricating FinFET semiconductor devices using planarized spacers (2012-09-18),

15. 8192641 - Methods for fabricating non-planar electronic devices having sidewall spacers formed adjacent selected surfaces (2012-06-05),

Title: **Frank Scott Johnson: Innovator in Semiconductor Technologies**

Introduction

Frank Scott Johnson is a prominent inventor based in Wappingers Falls, NY. With an impressive portfolio of 40 patents, he has made substantial contributions to the field of semiconductor devices and integrated circuits. His work reflects an ongoing commitment to advancing technology and improving electronic performance.

Latest Patents

One of Frank's latest innovations is a patent related to a semiconductor device with a doped region adjacent to an isolation structure in the extension region. This invention involves a sophisticated semiconductor layer that includes a first well and a second well, which together form a PN junction, significantly enhancing the functionality of integrated devices. Another notable patent details methods for converting planar designs to FinFET designs in integrated circuit fabrication. This method streamlines the transition from traditional planar techniques to advanced non-planar configurations, optimizing the design process for modern circuitry.

Career Highlights

Throughout his career, Frank has been associated with notable companies, including Texas Instruments Corporation and GlobalFoundries Inc. His experiences within these industry leaders have enabled him to hone his skills in semiconductor technologies and contribute to significant advancements in the field.

Collaborations

Frank has collaborated with esteemed colleagues like Andreas Knorr and Scott D. Luning. These collaborations have fostered an environment of innovation, leading to the development of cutting-edge technologies that enhance the semiconductor industry.

Conclusion

Frank Scott Johnson exemplifies the spirit of innovation in the semiconductor sector. With a wealth of patents and a commitment to advancing technology, his work continues to shape the future of electronics. As the field evolves, his contributions will undoubtedly leave a lasting impact on both current and future generations of technologies.

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