Average Co-Inventor Count = 1.96
ph-index = 9
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Texas Instruments Corporation (19 from 29,263 patents)
2. Globalfoundries Inc. (18 from 5,671 patents)
3. International Business Machines Corporation (1 from 164,197 patents)
4. Advanced Micro Devices Corporation (1 from 12,883 patents)
5. Stmicroelectronics Gmbh (1 from 2,870 patents)
6. Globalfoundries Singapore Pte. Ltd. (1 from 1,020 patents)
7. Globalfoundries U.S. Inc. (1 from 941 patents)
40 patents:
1. 11195947 - Semiconductor device with doped region adjacent isolation structure in extension region
2. 9336345 - Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits
3. 9257325 - Semiconductor structures and methods for forming isolation between Fin structures of FinFET devices
4. 9123570 - Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
5. 9000534 - Method for forming and integrating metal gate transistors having self-aligned contacts and related structure
6. 8912603 - Semiconductor device with stressed fin sections
7. 8865596 - Methods for forming semiconductor structures using selectively-formed sidewall spacers
8. 8736061 - Integrated circuits having a continuous active area and methods for fabricating same
9. 8729609 - Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereof
10. 8603893 - Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates
11. 8558318 - Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
12. 8404592 - Methods for fabricating FinFET semiconductor devices using L-shaped spacers
13. 8383503 - Methods for forming semiconductor structures using selectively-formed sidewall spacers
14. 8268727 - Methods for fabricating FinFET semiconductor devices using planarized spacers
15. 8192641 - Methods for fabricating non-planar electronic devices having sidewall spacers formed adjacent selected surfaces