The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
May. 30, 2006
George Jonathan Kluth, Hopewell Junction, NY (US);
Douglas James Bonser, Hopewell Junction, NY (US);
George Jonathan Kluth, Hopewell Junction, NY (US);
Douglas James Bonser, Hopewell Junction, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and system for integrated circuit (IC) processing combines an ion implantation tool and a laser anneal tool in a single unit with a shared precision X-Y scanner. A semiconductor wafer is loaded onto a the X-Y table of the scanner. Data defining the desired ion implantation is used to first customize circuit areas on the semiconductor wafer by gating ON and OFF the ion beam while semiconductor wafer is scanned. Any inadvertent ion beam interruptions are noted by storing the locations of the interruptions. The wafer is then reprocessed to correct faults caused by the interruptions. The laser anneal tool positions the laser beam over the semiconductor wafer it is then scanned while gating the laser beam ON and OFF to custom anneal the wafer devices. Again, any inadvertent laser beam interruptions are detected and the locations of the interruptions are stored for reprocessing to correct faults.