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For the Inventor, By the Inventor

Hsinchu, Taiwan

Dian-Sheg Yu

USPTO Granted Patents = 20

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:

goldMedal20 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2025

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20 patents (USPTO):
1. 12414281 - Implantations for forming source/drain regions of different transistors (2025-09-09),
2. 12324222 - Semiconductor device with contracted isolation feature (2025-06-03),
3. 12033940 - Semiconductor device and method (2024-07-09),
4. 11895819 - Implantations for forming source/drain regions of different transistors (2024-02-06),
5. 11532554 - Interconnect device and method (2022-12-20),
6. 11527540 - Implantations for forming source/drain regions of different transistors (2022-12-13),
7. 11251091 - Semiconductor device with contracted isolation feature (2022-02-15),
8. 11210447 - Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devices (2021-12-28),
9. 11189340 - Circuit in memory device for parasitic resistance reduction (2021-11-30),
10. 11145660 - Dual-port SRAM cell structure (2021-10-12),
11. 10930590 - Interconnect device and method (2021-02-23),
12. 10847457 - Semiconductor device and method (2020-11-24),
13. 10811321 - Semiconductor device with contracted isolation feature (2020-10-20),
14. 10685967 - Implantations for forming source/drain regions of different transistors (2020-06-16),
15. 10373879 - Semiconductor device with contracted isolation feature and formation method thereof (2019-08-06),

Title: Innovations by Dian-Sheg Yu in Semiconductor Technology

Introduction

Dian-Sheg Yu is a recognized inventor located in Hsinchu, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio comprising 19 patents, Dian-Sheg has made notable advancements that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents, Dian-Sheg Yu has developed a novel semiconductor device featuring a contracted isolation feature. This invention includes first and second semiconductor fins, as well as multiple gate structures and a dielectric structure, designed to optimize the arrangement and functionality of the device. The first and second gate structures extend across the respective semiconductor fins, while the dielectric structure acts as an intermediary, showcasing a meticulous design that aims to improve device performance.

Another significant invention by him involves the structure and method for the formation of fuses within a semiconductor device. These fuses are strategically arranged within the third metal layer, perpendicular to the active devices on the semiconductor substrate. Furthermore, they are designed to be thicker than the underlying second metal layer, enhancing the reliability and functionality of the semiconductor device.

Career Highlights

Dian-Sheg Yu currently works at Taiwan Semiconductor Manufacturing Company Ltd., a leading global player in the semiconductor industry. His role encompasses innovative research and development, where he pushes the boundaries of semiconductor technology through his inventive designs and processes.

Collaborations

Throughout his career, Dian-Sheg has collaborated with esteemed colleagues, including Ren-Fen Tsui and Jhon Jhy Liaw. These collaborations have fostered an environment of innovation, yielding numerous advancements in semiconductor design and functionality.

Conclusion

Dian-Sheg Yu’s contributions to semiconductor technology through his patents illustrate a commitment to innovation and advancement. His work not only reflects his expertise but also sets a remarkable standard in the industry, influencing future developments in semiconductor applications.

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