The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Oct. 19, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Dian-Sheg Yu, Hsinchu, TW;

Ren-Fen Tsui, Hsinchu, TW;

Jhon-Jhy Liaw, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/28114 (2013.01); H01L 21/3105 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/7843 (2013.01); H01L 21/823437 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a semiconductor fin, a gate cut region, a first gate structure and a second gate structure. The semiconductor fin extends from a substrate. The gate cut region extends in parallel with a longitudinal axis of the semiconductor fin and not overlaps the semiconductor fin. The first gate structure and the second gate structure extend across the semiconductor fin. The first gate structure is laterally between the gate cut region and the second gate structure along a direction parallel with the longitudinal axis of the semiconductor fin. The first gate structure has a greater width variation than the second gate structure.


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