The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jul. 31, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Dian-Sheg Yu, Hsinchu, TW;
Ren-Fen Tsui, Taipei, TW;
Jhon Jhy Liaw, Hsinchu County, TW;
Bing-Chian Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A dual-port SRAM includes a substrate, first and second active regions over the substrate and oriented lengthwise generally along a first direction; first and second gate electrodes oriented lengthwise generally along a second direction perpendicular to the first direction. The first and second gate electrodes engage the first and second active regions to form first and second pass gate transistors, respectively. The dual-port SRAM further includes a first gate contact disposed over the first gate electrode and electrically connected to the first gate electrode and a first source/drain contact oriented lengthwise generally along the second direction. The first source/drain contact directly contacts source/drain features of the first and second pass gate transistors. A portion of the first gate contact and a portion of the first source/drain contact are at a same vertical level from a top surface of the substrate and are aligned along the first direction.