Location History:
- Hsinchu County, TW (2018)
- Hsinchu, TW (2021)
Company Filing History:
Years Active: 2018-2021
Title: The Innovative Mind of Bing-Chian Lin
Introduction
Bing-Chian Lin is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to the field of memory devices. With a total of three patents to his name, Lin has demonstrated a dedication to advancing technology that enhances the performance and efficiency of memory systems.
Latest Patents
Lin's latest patents showcase his technical expertise and innovative approach. One of his notable inventions is the "Circuit in Memory Device for Parasitic Resistance Reduction." This invention involves a memory device featuring a plurality of memory cells located in a first region. The design of the memory cells includes a first signal line and a first circuit, which can be selectively enabled to improve electrical coupling with a second signal line, thereby reducing parasitic resistance.
Another significant patent is the "Dual-Port SRAM Cell Structure," which includes a substrate and two active regions. This design incorporates first and second gate electrodes that interact with the active regions to form pass gate transistors. The configuration allows for effective contact features and optimized vertical alignment, enhancing the overall performance of dual-port SRAM technology.
Career Highlights
Bing-Chian Lin is currently associated with Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), a leader in the semiconductor industry. His work has been instrumental in pushing the boundaries of memory technology, supporting the ever-evolving demands of computing and electronic devices.
Collaborations
In the course of his career, Lin has collaborated with talented individuals such as Ren-Fen Tsui and Dian-Sheg Yu. These collaborations have fostered an innovative environment that cultivates creative solutions and enhances the development of advanced semiconductor technologies.
Conclusion
Bing-Chian Lin is a notable figure in the realm of memory device innovation. His patents reflect a commitment to enhancing memory performance while reducing inefficiencies. As technology continues to evolve, Lin's work will undoubtedly play a critical role in shaping the future of computing and electronic systems.