The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

May. 29, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Dian-Sheg Yu, Hsinchu, TW;

Jhon Jhy Liaw, Hsinchu County, TW;

Ren-Fen Tsui, Taipei, TW;

Bing-Chian Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G11C 11/418 (2006.01); H01L 27/11 (2006.01); G11C 11/419 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
G11C 11/418 (2013.01); G11C 11/419 (2013.01); H01L 23/528 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01);
Abstract

A memory device includes a plurality of memory cells located in a first region of the memory device. The memory cells include a first signal line, a first circuit located in the first region of the memory device, and a plurality of logic circuits located in a second region of the memory device. The second region and the first region have different design rules. The first circuit is configured to be selectively enabled and disabled. When the first circuit is enabled, the first signal line is electrically coupled in parallel with a second signal line.


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