The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Aug. 05, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 21/3105 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/28114 (2013.01); H01L 21/3105 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/7843 (2013.01); H01L 21/823437 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a substrate having a semiconductor fin, an isolation feature over the substrate and not overlapping the semiconductor fin, a first gate structure over the substrate, and a second gate structure over the substrate. The isolation feature is closer to the first gate structure than the second gate structure. The first gate structure has a maximum width greater than a maximum width of the second gate structure.