Daniel Bensahel

This inventor holds 32 USPTO granted patents and 1 EPO patent. Top assignees: STMicroelectronics, Stmicroelectronics (Crolles 2) Sas, S.o.i.tec Silicon on Insulator Technologies. Active years: 1980-2016.

USPTO Granted Patents = 32

% Patents Active = 71.9

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 2.7

ph-index = 11

Forward Citations = 399(Granted Patents)

Location History:

38000 Gremble, FR (1988)
Grenoble, FR (1980 - 2016)

Company Filing History:

Stmicroelectronics (Crolles 2) Sas

patents

4 out of 214

S.o.i.tec Silicon on Insulator Technologies

patents

4. 3 out of 8,801

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Etablissement Autonome De Droit Public: France Telecom

patent

8. 1 out of 1

Etat Francais Represente Par Le Minitre Des Ptt, Centre National

patent

9. 1 out of 86

S.o.i. Tec Silicon on Insulator Technologies, S.a.

patents

10. 4 out of 834,307

Other

patents

where one patent can have more than one assignee

Years Active: 1980-2016

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Areas of Expertise:

Semiconductor Substrate

Integrated Circuits

Single-Crystal Semiconductor

Strained Semiconductor

Quantum Dots

Heteroatomic Layers

Field Effect Transistor

Gate Dielectric

Optoelectronic Devices

Silicon Germanium Alloys

Plasma Cleaning

Insulating Layers

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9356094 - Method for making a semi-conducting substrate located on an insulation layer (2016-05-31),

2. 8906776 - Method for forming integrated circuits on a strained semiconductor substrate (2014-12-09),

3. 8536027 - Method for making a semi-conducting substrate located on an insulation layer (2013-09-17),

4. 8263965 - Single-crystal semiconductor layer with heteroatomic macro-network (2012-09-11),

5. 8049224 - Process for transferring a layer of strained semiconductor material (2011-11-01),

6. 7884352 - Single-crystal semiconductor layer with heteroatomic macronetwork (2011-02-08),

7. 7879679 - Electronic component manufacturing method (2011-02-01),

8. 7803694 - Process for transferring a layer of strained semiconductor material (2010-09-28),

9. 7534701 - Process for transferring a layer of strained semiconductor material (2009-05-19),

10. 7381267 - Heteroatomic single-crystal layers (2008-06-03),

11. 7338883 - Process for transferring a layer of strained semiconductor material (2008-03-04),

12. 7279404 - Process for fabricating strained layers of silicon or of a silicon/germanium alloy (2007-10-09),

13. 7129563 - Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material (2006-10-31),

14. 7033438 - Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate (2006-04-25),

15. 6989570 - Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit (2006-01-24),

Title: **Daniel Bensahel: Innovator in Semiconductor Technology**

Introduction

Daniel Bensahel is a prominent inventor based in Grenoble, France, known for his significant contributions to semiconductor technology. With an impressive portfolio of 32 patents, he has played a pivotal role in advancing methods used in the production and integration of electronic circuits.

Latest Patents

Among his latest innovations, Bensahel developed a method for making a semi-conducting substrate located on an insulation layer. This intricate procedure includes forming a silicon-germanium layer, transforming parts into porous silicon pads, and growing a monocrystalline silicon layer, showcasing his expertise in semiconductor fabrication. Another notable patent involves forming integrated circuits on a strained semiconductor substrate, where he detailed the process of creating electronic components and utilizing a porous semiconductor layer to bend the substrate, enhancing the performance of electronic circuits.

Career Highlights

Bensahel has made significant strides in his career while working for renowned companies, including STMicroelectronics S.A. and STMicroelectronics (Crolles 2) SAS. His involvement in these companies has allowed him to further develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Throughout his career, Daniel Bensahel has collaborated with notable individuals, including Yves Campidelli and Caroline Hernandez. These partnerships have contributed to his successful patent filings and advancements in the field of semiconductors.

Conclusion

With a total of 32 patents to his name, Daniel Bensahel continues to influence the semiconductor industry through his innovative methods and collaborative efforts. His work not only enhances electronic component fabrication but also paves the way for future advancements in technology.