The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Mar. 31, 2003
Applicants:
Thomas Skotnicki, Crolles, FR;
Daniel Bensahel, Grenoble, FR;
Inventors:
Thomas Skotnicki, Crolles, FR;
Daniel Bensahel, Grenoble, FR;
Assignee:
STMicroelectronics S.A., , FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor is located on a base layerresting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate, a first strained silicon layerresting on the base layer, surmounted by a buried insulating layer, surmounted by a second strained silicon layerextending between the source S and drain D regions.
Skotnicki, Thomas. (2006). Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit (U.S. Patent No. 6989570). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6989570
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile