The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Jun. 24, 2005
Bruno Ghyselen, Seyssinet, FR;
Daniel Bensahel, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
Bruno Ghyselen, Seyssinet, FR;
Daniel Bensahel, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.