The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Apr. 01, 2004
Applicants:
Daniel Bensahel, Grenoble, FR;
Olivier Kermarrec, Gieres, FR;
Yves Morand, Grenoble, FR;
Yves Campidelli, Grenoble, FR;
Vincent Cosnier, Grenoble, FR;
Inventors:
Daniel Bensahel, Grenoble, FR;
Olivier Kermarrec, Gieres, FR;
Yves Morand, Grenoble, FR;
Yves Campidelli, Grenoble, FR;
Vincent Cosnier, Grenoble, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.