The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Jul. 01, 2004
Applicants:
Aomar Halimaoui, La Terrasse, FR;
Daniel Bensahel, Grenoble, FR;
Inventors:
Aomar Halimaoui, La Terrasse, FR;
Daniel Bensahel, Grenoble, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer () of silicon or of a silicon/germanium alloy on a layer () of a material having a modifiable lattice parameter; and b) the modification of the lattice parameter.