The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Apr. 01, 2004
Applicants:
Vincent Cosnier, Grenoble, FR;
Yves Morand, Grenoble, FR;
Olivier Kermarrec, Gieres, FR;
Daniel Bensahel, Grenoble, FR;
Yves Campidelli, Grenoble, FR;
Inventors:
Vincent Cosnier, Grenoble, FR;
Yves Morand, Grenoble, FR;
Olivier Kermarrec, Gieres, FR;
Daniel Bensahel, Grenoble, FR;
Yves Campidelli, Grenoble, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of SiGe, where 0.5<x≦1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).