IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Dai Ishikawa

USPTO Granted Patents = 44 

 

Average Co-Inventor Count = 4.6

ph-index = 15

Forward Citations = 4,904(Granted Patents)


Location History:

  • Tsukuba, JP (2019)
  • Ome, JP (2004 - 2023)
  • Tokyo, JP (2002 - 2024)

Company Filing History:

goldMedal24 out of 1,130 
 
Asm IP Holding B.v.
 patents
silverMedal7 out of 139 
 
Showa Denko Materials Co., Ltd.
 patents
bronzeMedal5 out of 1,641 
 
Hitachi Chemical Company, Ltd.
 patents
4. 4 out of 3,781 
 
Renesas Technology Corp.
 patents
5. 2 out of 2,646 
 
Pioneer Corporation
 patents
6. 2 out of 288 
 
Resonac Corporation
 patents

Years Active: 2002-2025

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44 patents (USPTO):
1. 12233460 - Copper paste, wick formation method, and heat pipe (2025-02-25),
2. 11887960 - Member connection method (2024-01-30),
3. 11784043 - Formation of SiN thin films (2023-10-10),
4. 11676812 - Method for forming silicon nitride film selectively on top/bottom portions (2023-06-13),
5. 11575076 - Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module (2023-02-07),
6. 11532588 - Copper paste for pressureless bonding, bonded body and semiconductor device (2022-12-20),
7. 11483936 - Method for producing joined body, and joining material (2022-10-25),
8. 11462502 - Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device (2022-10-04),
9. 11370066 - Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device (2022-06-28),
10. 11133181 - Formation of SiN thin films (2021-09-28),
11. 11040416 - Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device (2021-06-22),
12. 10930612 - Copper paste for pressureless bonding, bonded body and semiconductor device (2021-02-23),
13. 10910262 - Method of selectively depositing a capping layer structure on a semiconductor device structure (2021-02-02),
14. 10811256 - Method for etching a carbon-containing feature (2020-10-20),
15. 10793946 - Reaction chamber passivation and selective deposition of metallic films (2020-10-06),

Title: Dai Ishikawa - Innovative Inventor from Tokyo

Introduction: Dai Ishikawa is a renowned inventor based in Tokyo, Japan, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Dai Ishikawa holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the industry, Dai Ishikawa has led numerous successful projects that have revolutionized the way we approach technology and engineering. His commitment to pushing boundaries and exploring new possibilities has earned him a reputation as a visionary inventor.

Collaborations: Throughout his career, Dai Ishikawa has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many of his projects.

Conclusion: Dai Ishikawa's passion for innovation and his dedication to creating solutions that make a difference have solidified his position as a key figure in the world of invention. His work continues to inspire and shape the future of technology.

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