The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jun. 17, 2020
Asm Ip Holding B.v., Almere, NL;
Dai Ishikawa, Ome, JP;
Atsuki Fukazawa, Tama, JP;
Eiichiro Shiba, Tama, JP;
Shinya Ueda, Hachioji, JP;
Taishi Ebisudani, Tama, JP;
SeungJu Chun, Chungcheongnam-do, KR;
YongMin Yoo, Seoul, KR;
YoonKi Min, Seoul, KR;
SeYong Kim, Daejeon-si, KR;
JongWan Choi, Gyeonggi-do, KR;
ASM IP Holding B.V., Almere, NL;
Abstract
A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.