Hachioji, Japan

Shinya Ueda


Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 381(Granted Patents)


Location History:

  • Tokyo, JP (2020)
  • Hachioji, JP (2019 - 2023)

Company Filing History:


Years Active: 2019-2025

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8 patents (USPTO):

Title: Shinya Ueda: Innovator in Thin-Film Deposition Technologies

Introduction

Shinya Ueda is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of thin-film deposition technologies, holding a total of eight patents. His innovative approaches have advanced the methods used in material deposition, particularly in semiconductor manufacturing.

Latest Patents

Ueda's latest patents include groundbreaking methods for silicon nitride and silicon oxide deposition. One of his notable inventions is a method that utilizes a fluorine reactant to reduce the growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a substrate's surface. This innovation enhances the efficiency and quality of the deposition process. Another significant patent is a thin-film deposition method and system that employs various plasma conditions to achieve optimal film thickness uniformity and surface modification. These advancements are crucial for improving the performance of electronic devices.

Career Highlights

Shinya Ueda has built a successful career at Asm IP Holding B.V., where he continues to develop cutting-edge technologies in the field of material science. His work has not only contributed to the company's success but has also positioned him as a leading figure in the industry.

Collaborations

Ueda has collaborated with talented individuals such as Taishi Ebisudani and Eiichiro Shiba. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Shinya Ueda's contributions to thin-film deposition technologies have made a significant impact on the semiconductor industry. His innovative patents and collaborative efforts continue to drive advancements in material science.

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