Asm IP Holding B.v.

Shinya Ueda

Taishi Ebisudani

Eiichiro Shiba

Atsuki Fukazawa

Dai Ishikawa

YoonKi Min

JongWan Choi

SeungJu Chun

YongMin Yoo

SeYong Kim

Toshiya Suzuki

Tomohiro Kubota

SeokJae Oh

HeeSung Kang

YoungJae Kim

Sunja Kim

HyounMo Choi

Wangyu Lim

Takashi Mizoguchi

Tomomi Takayama

HyunGyu Jang

Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.

Silicon nitride and silicon oxide deposition methods using fluorine inhibitor

A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

Thin-film deposition method and system

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on top/bottom portions

Methods of depositing material on a surface of a substrate are disclosed. The methods include exposing a surface of the substrate to a precursor within a reaction chamber to form adsorbed species on the surface and removing at least a portion of the adsorbed species prior to introducing a reactant to the reaction chamber.

Method of depositing material onto a surface and structure formed according to the method

Method for forming silicon nitride film selectively on top surface

Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

Methods for forming a silicon nitride film

Growing community of inventors

Hachioji, Japan

Shinya Ueda