JongWan Choi

Title: Innovations of JongWan Choi in Thin Film Technology

Introduction

JongWan Choi is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of thin film technology, holding a total of four patents. His work focuses on advanced substrate processing methods that enhance the efficiency and quality of film formation.

Latest Patents

One of JongWan Choi's latest patents is a thin film forming method. This innovative substrate processing method allows for the filling of gaps without seams or voids. The process involves providing a substrate with a gap in a reaction chamber, pumping down the chamber to a pressure at or below 5 Torr, and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant, and radio frequency electromagnetic radiation. This method incorporates both high and low radio frequency components to achieve optimal results.

Another significant patent is the method for forming silicon nitride film selectively on top and bottom portions. This method fabricates a layer structure in a trench by simultaneously forming a dielectric film containing a Si—N bond on the upper surface, bottom surface, and sidewalls of the trench. The top and bottom portions of the film are given different chemical resistance properties through plasma bombardment, allowing for selective removal of the sidewall portion by wet etching.

Career Highlights

JongWan Choi is currently employed at ASM IP Holding B.V., where he continues to innovate in the field of thin film technology. His expertise and contributions have positioned him as a key figure in the development of advanced substrate processing techniques.

Collaborations

Throughout his career, JongWan Choi has collaborated with talented individuals such as Dai Ishikawa and Atsuki Fukazawa. These collaborations have further enriched his work and contributed to the advancement of thin film technologies.

Conclusion

JongWan Choi's innovative work in thin film technology has led to significant advancements in substrate processing methods. His patents reflect a commitment to enhancing the efficiency and quality of film formation, making him a prominent figure in his field.