Eiichiro Shiba is a prominent inventor based in Tama, Japan. He has made significant contributions to the field of material deposition technologies, holding a total of 12 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of material application processes.

Latest Patents

Among his latest patents, Shiba has developed methods for silicon nitride and silicon oxide deposition using a fluorine inhibitor. These methods involve utilizing a fluorine reactant to reduce the growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a substrate's surface. Another notable patent is a method for fabricating a layer structure with a target topological profile. This method includes processes for depositing a dielectric layer on a substrate and exposing it to fluorine and/or chlorine radicals to achieve the desired topology.

Career Highlights

Eiichiro Shiba is currently associated with Asm IP Holding B.V., where he continues to innovate in the field of material sciences. His expertise in deposition methods has positioned him as a key figure in advancing technology in this area.

Collaborations

Shiba has collaborated with notable professionals in his field, including Shinya Ueda and Dai Ishikawa. These collaborations have contributed to the development of cutting-edge technologies and methodologies.

Conclusion

Eiichiro Shiba's contributions to material deposition technologies are noteworthy, and his innovative patents reflect his commitment to advancing the field. His work continues to influence the industry and inspire future innovations.

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