The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Oct. 11, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Kentaro Kojima, Kawasaki, JP;

Takeru Kuwano, Kawasaki, JP;

Eiichiro Shiba, Hachioji, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01); C23C 16/56 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/509 (2013.01); C23C 16/345 (2013.01); C23C 16/56 (2013.01); H01J 37/32082 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cmthe material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.


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