Asm IP Holding B.v.

Showa Denko Materials Co., Ltd.

Hitachi Chemical Company, Ltd.

Renesas Technology Corp.

Pioneer Corporation

Resonac Corporation

Dai Ishikawa

Hideo Nakako

Yoshinori Ejiri

Yuki Kawana

Chie Sugama

Shang Chen

Kunitoshi Namba

Takahiro Onuma

Toshiharu Watarai

Kazuhiko Kurafuchi

Atsuki Fukazawa

Kiyohiro Matsushita

Motohiro Negishi

Jan Willem Maes

Qi Xie

Antti Niskanen

Satoshi Sakai

Atsushi Hiraiwa

Delphine Longrie

Han Wang

Viljami J Pore

Toshiya Suzuki

Akiko Kobayashi

Akinori Nakano

Eiichiro Shiba

Ryoko Yamada

Shinya Ueda

Taishi Ebisudani

YoonKi Min

SeungJu Chun

JongWan Choi

YongMin Yoo

SeYong Kim

Toshiaki Tanaka

Yoshihiro Ikeda

Michiko Natori

Shintaro Ueda

Tomohiro Kubota

Aurélie Kuroda

Hirofumi Arai

Hidekazu Yoshida

Ryuichiro Matsumoto

Hiroshi Matsumoto

Toshihisa Nozawa

Yosuke Kimura

Mitsuya Utsuno

Kazuyuki Uchiyama

Michiaki Hamada

Yuichi Yanaka

Hsiao Pei Chung

Chiharu Akaishi

Provided is a copper paste for forming a wick of a heat pipe, the copper paste containing copper particles, thermally decomposable resin particles, a dispersion medium for dispersing the copper particles and the thermally decomposable resin particles, and a thermally decomposable resin that is soluble in the dispersion medium.

Copper paste, wick formation method, and heat pipe

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Member connection method

Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as HSiI. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Formation of SiN thin films

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on top/bottom portions

A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided between the electrode and the semiconductor.

Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 &#x3bc;m and less than or equal to 0.8 &#x3bc;m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 &#x3bc;m and less than or equal to 50 &#x3bc;m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300&#xb0; C., and a content of the solvent having a boiling point of higher than or equal to 300&#xb0; C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Copper paste for pressureless bonding, bonded body and semiconductor device

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):()/&#xd7;100&#x2265;1.0&#x2003;&#x2003;(I)[in Formula (I), Mrepresents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and Mrepresents a non-volatile content in the joining material.]

Method for producing joined body, and joining material

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 &#x3bc;m to 0.8 &#x3bc;M.

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 &#x3bc;m to 0.8 &#x3b7;m, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.

Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as HSiI. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 &#x3bc;m to 0.8 &#x3bc;m, and flake-shaped micro copper particles having a maximum particle size of 1 &#x3bc;m to 20 &#x3bc;m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 &#x3bc;m to 20 &#x3bc;m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

Method of selectively depositing a capping layer structure on a semiconductor device structure

Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

Method for etching a carbon-containing feature

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Reaction chamber passivation and selective deposition of metallic films

Growing community of inventors

Tokyo, Japan

Dai Ishikawa