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For the Inventor, By the Inventor

Hsinchu, Taiwan

Chrong-Jung Lin

USPTO Granted Patents = 64 

Average Co-Inventor Count = 2.8

ph-index = 11

Forward Citations = 404(Granted Patents)

Forward Citations (Not Self Cited) = 397(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Hsin-Tein, TW (1999 - 2000)
  • Science-Based Industrial Park, Hsin-Chu, TW (2000)
  • Hsien-Tien, TW (2001)
  • Taipei, TW (1999 - 2006)
  • Hsin Tien, TW (2000 - 2006)
  • Taipei Hsien, TW (2000 - 2009)
  • Taipei County, TW (2013)
  • Hsinchu, TW (2009 - 2024)

Company Filing History:

goldMedal35 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal10 out of 4,296 
 
Tsinghua University
 patents
bronzeMedal4 out of 4,573 
 
Au Optronics Corporation
 patents
4. 3 out of 4 
 
Copee Technology Company
 patents
5. 2 out of 416 
 
Ememory Technology Inc.
 patents
6. 1 out of 1 
 
Glyphtron Corp.
 patent
7. 1 out of 1,323 
 
Lite-on Technology Corporation
 patents
8. 1 out of 1 
 
Chrong-jung Lin
 patent
9. 1 out of 1,088 
 
Vanguard International Semiconductor Corporation
 patents
10. 1 out of 1 
 
Art Talent Industrial Limited
 patent
11. 6 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2025

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64 patents (USPTO):
1. 12431194 - Resistive random access memory unit with one-way conduction characteristic and fabricating method thereof (2025-09-30),
2. 12426517 - Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same (2025-09-23),
3. 12262545 - Three-dimensional resistive random access memory structure (2025-03-25),
4. 12142537 - Defect measurement method (2024-11-12),
5. 12041860 - Resistive memory device and method for manufacturing with protrusion of electrode (2024-07-16),
6. 12040028 - Low voltage one-time-programmable memory and array thereof (2024-07-16),
7. 12009177 - Detection using semiconductor detector (2024-06-11),
8. 11695082 - Non-volatile memory cell and non-volatile memory (2023-07-04),
9. 11653503 - Semiconductor structure with data storage structure and method for manufacturing the same (2023-05-16),
10. 11335609 - Micro detector (2022-05-17),
11. 11043601 - Non-volatile memory cell and non-volatile memory (2021-06-22),
12. 10910469 - Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay (2021-02-02),
13. 10763305 - Semiconductor structure with data storage structure (2020-09-01),
14. 10276726 - Non-volatile memory cell and non-volatile memory (2019-04-30),
15. 10269437 - Non-volatile memory device and operation method of the same (2019-04-23),

Title: Chrong-Jung Lin: Innovator from Hsinchu

Introduction: Chrong-Jung Lin is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chrong-Jung Lin holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Chrong-Jung Lin has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Chrong-Jung Lin has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Chrong-Jung Lin's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and innovators worldwide.

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