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Hsinchu, Taiwan

Chrong-Jung Lin

USPTO Granted Patents = 64 (Patent Applications = 14)

Average Co-Inventor Count = 2.8

ph-index = 11

Forward Citations = 404(Granted Patents)

Forward Citations (Not Self Cited) = 397(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsin-Tein, TW (1999 - 2000)
Science-Based Industrial Park, Hsin-Chu, TW (2000)
Hsien-Tien, TW (2001)
Taipei, TW (1999 - 2006)
Hsin Tien, TW (2000 - 2006)
Taipei Hsien, TW (2000 - 2009)
Taipei County, TW (2013)
Hsinchu, TW (2009 - 2024)

Company Filing History:

35 out of 40,850

Taiwan Semiconductor Manufacturing Comp. Ltd.

10 out of 4,310

Tsinghua University

Au Optronics Corporation

Copee Technology Company

5. 2 out of 418

Ememory Technology Inc.

Glyphtron Corp.

7. 1 out of 1,326

Lite-on Technology Corporation

Chrong-jung Lin

9. 1 out of 1,096

Vanguard International Semiconductor Corporation

Art Talent Industrial Limited

11. 6 out of 832,880

Other

patents

where one patent can have more than one assignee

Years Active: 1999-2025

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Areas of Expertise:

Resistive Random Access Memory

Non-Volatile Memory

Semiconductor Structure

Memory Array

Photo Sensor

Flash Memory Cell

Tunable Current Driver

Optical Touch Panel

Defect Measurement

Vertical Stacked Gate

Variable Resistive Element

Split Gate Field Effect Transistor

64 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12431194 - Resistive random access memory unit with one-way conduction characteristic and fabricating method thereof (2025-09-30),

2. 12426517 - Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same (2025-09-23),

3. 12262545 - Three-dimensional resistive random access memory structure (2025-03-25),

4. 12142537 - Defect measurement method (2024-11-12),

5. 12041860 - Resistive memory device and method for manufacturing with protrusion of electrode (2024-07-16),

6. 12040028 - Low voltage one-time-programmable memory and array thereof (2024-07-16),

7. 12009177 - Detection using semiconductor detector (2024-06-11),

8. 11695082 - Non-volatile memory cell and non-volatile memory (2023-07-04),

9. 11653503 - Semiconductor structure with data storage structure and method for manufacturing the same (2023-05-16),

10. 11335609 - Micro detector (2022-05-17),

11. 11043601 - Non-volatile memory cell and non-volatile memory (2021-06-22),

12. 10910469 - Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay (2021-02-02),

13. 10763305 - Semiconductor structure with data storage structure (2020-09-01),

14. 10276726 - Non-volatile memory cell and non-volatile memory (2019-04-30),

15. 10269437 - Non-volatile memory device and operation method of the same (2019-04-23),

Title: Chrong-Jung Lin: Innovator from Hsinchu

Introduction: Chrong-Jung Lin is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chrong-Jung Lin holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Chrong-Jung Lin has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Chrong-Jung Lin has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Chrong-Jung Lin's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and innovators worldwide.

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