The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jun. 07, 2019
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Wen-Hua Wen, Taoyuan, TW;

Chia-Shen Liu, Hsinchu, TW;

Wen-Chung Chen, Changhua County, TW;

Chrong-Jung Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.


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