Hsinchu, Taiwan

Wen-Chung Chen

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Hsinchu Hsien, TW (2004)
  • Hsinchu, TW (2004 - 2014)
  • Changhua County, TW (2010 - 2021)

Company Filing History:


Years Active: 2004-2021

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5 patents (USPTO):Explore Patents

Title: The Innovations of Wen-Chung Chen

Introduction

Wen-Chung Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay." This invention includes a substrate with a first conductivity type and a conducting structure designed to enhance device performance. Another notable patent is "High voltage semiconductor device and method for fabricating the same." This patent describes a high voltage semiconductor device that incorporates a gate structure and various doping regions to optimize functionality.

Career Highlights

Wen-Chung Chen has worked with several notable companies, including Vanguard International Semiconductor Corporation and Nanodynamics, Inc. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Throughout his career, Chen has collaborated with talented individuals such as Ching-Yu Chou and Chien-Ming Lin. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Wen-Chung Chen's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry positively.

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