Vanguard International Semiconductor Corporation

Nanodynamics, Inc.

Wen-Chung Chen

Chih-Wei Lin

Chrong-Jung Lin

Chih-Cherng Liao

Ching-Yi Hsu

Ching-Yu Chou

Pi-Kuang Chuang

Yun-Chou Wei

Chuang-Hsien Chiu

Yung-Lung Chou

Chien-Ming Lin

Chi-Chung Hsu

Che-Hua Chang

Chung-Te Chou

Ya-Han Liang

Chia-Shen Liu

Yun-Sheng Liu

Wen-Hua Wen

Cheng-Lun Cho

A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.

Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay

A high voltage (HV) semiconductor device includes: a semiconductor substrate having a first conductivity type; a gate structure disposed over a portion of the semiconductor substrate; a pair of spacers respectively disposed over a sidewall of the gate structure, wherein one of the spacers is a composite spacer comprising a first insulating spacer contacting the gate structure, a dummy gate structure, and a second insulating spacer; a first drift region disposed in a portion of the semiconductor, underlying a portion of the gate structure and one of the pair of spacers, having a second conductivity type opposite to the first conductivity type; and a pair of doping regions, respectively disposed in a portion of the semiconductor substrate on opposite sides of the gate structure, wherein the pair of doping regions include the second conductivity type and one of the doping regions is disposed in the first drift region.

High voltage semiconductor device and method for fabricating the same

A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises providing a substrate with a logic device region and a memory device region. A logic device with a first silicide region and a first silicide block region and a memory device with a second silicide region and a second silicide block region are formed in the logic device region and the memory device region, respectively. A first insulating layer is formed covering the first and second silicide block regions. A silicide process is performed to form a silicide layer on the first and second silicide regions. An underlying second insulating layer and an insulating barrier layer are formed covering the first insulating layer and the silicide layer.

Semiconductor device fabricating method

An inkjet pen including an ink reservoir for storing ink and providing ink for jetting. A port, located on top of the ink reservoir, fluid-communicated with the ambient air, is used for adjusting the air pressure inside the reservoir. A valve, operated by a spring or a resilient element, normally seals the port, while occasionally opening the port to introduce air into the reservoir when the ink level is low and the underpressure rises. In other embodiments, an elastic bag is included in the reservoir that has an opening communicated with the ambient air through a second port formed on top of the reservoir. The elastic bag expands in response to the increasing underpressure generated in the reservoir when ink is being used. The bag expansion actuates the opening of the valve so as to regulate the underpressure.

Underpressure regulating mechanism for inkjet pens

An air pressure regulating device for ink cartridges that is not affected or interfered with by magnetic fields. In accordance with the invention a ventilating vent is settled inside the ink cartridge so that the inside region of the ink cartridge is open to the ambient air and at the same time this ventilating vent is also directed to a fixed seat. In the fixed seat a gas vent is settled to direct to the ink cartridge. On the outside region of the gas vent settled in the fixed seat a layer of elastic gastight material is covered such that it can be utilized to seal the gas vent to keep the ink cartridge sealed under ordinary conditions. When the pressure difference between the outside and inside regions of the ink cartridge reaches a critical value, the layer of the elastic gastight material is slightly pushed away so that a small quantity of air can flow into the ink cartridge to return the pressure to within a normal operating range.

Air pressure regulating device for ink cartridges

Growing community of inventors

Hsinchu, Taiwan

Wen-Chung Chen