Taoyuan, Taiwan

Wen-Hua Wen

This inventor holds 2 USPTO granted patents. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Hua Wen. Retrieved from https://idiyas.com/inventor/wen-hua-wen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021-2026

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2 patents (USPTO):Explore Patents

Title: Innovations of Wen-Hua Wen in Semiconductor Technology

Introduction

Wen-Hua Wen is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing the performance of semiconductor devices.

Latest Patents

Wen-Hua Wen holds a patent for a semiconductor device with a conducting structure designed to reduce parasitic capacitance and improve RC delay. This invention includes a substrate with a first conductivity type, which comprises a first isolation region, a first implant region, and a second implant region. The conducting structure is strategically placed on the substrate, with portions located on the first isolation region, thereby optimizing the device's performance.

Career Highlights

Wen-Hua Wen is currently employed at Vanguard International Semiconductor Corporation. His role at the company allows him to apply his expertise in semiconductor technology and contribute to the development of advanced electronic components.

Collaborations

Wen-Hua Wen has collaborated with several talented individuals in his field, including Chia-Shen Liu and Wen-Chung Chen. These collaborations have fostered innovation and have been instrumental in the advancement of semiconductor technologies.

Conclusion

Wen-Hua Wen's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent and collaborative efforts continue to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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