The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 06, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Der Chih, Hsinchu, TW;
Wen-Zhang Lin, Hsinchu, TW;
Yun-Sheng Chen, Hsinchu, TW;
Jonathan Tsung-Yung Chang, Hsinchu, TW;
Chrong-Jung Lin, Hsinchu, TW;
Ya-Chin King, Hsinchu, TW;
Cheng-Jun Lin, Hsinchu, TW;
Wang-Yi Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/021 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02);
Abstract
A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.