Company Filing History:
3 out of 4,310 
2 out of 40,850 
Years Active: 2019-2025
Title: Innovations of Wen-Zhang Lin
Introduction
Wen-Zhang Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of resistive memory devices, holding a total of 5 patents. His work focuses on advancing memory technology, which is crucial for modern electronic devices.
Latest Patents
Wen-Zhang Lin's latest patents include innovative designs for resistive memory devices. One of his notable patents is a resistive memory device with a protrusion covered with a resistance changing element and a method for manufacturing the same. This device features a bottom electrode, a top electrode, and a resistance changing element. The top electrode is positioned above and spaced apart from the bottom electrode, with a downward protrusion aligned with the bottom electrode. The resistance changing element covers the side and bottom surfaces of this protrusion. Another significant patent is a resistive memory device and method for manufacturing with a protrusion of the electrode, which shares similar structural elements and innovations.
Career Highlights
Wen-Zhang Lin has worked at esteemed institutions such as Tsinghua University and Taiwan Semiconductor Manufacturing Company. His experience in these organizations has allowed him to develop and refine his inventions, contributing to advancements in semiconductor technology.
Collaborations
Wen-Zhang Lin has collaborated with notable colleagues, including Meng-Fan Chang and Li-Ya Lai. These partnerships have fostered a collaborative environment that enhances innovation and research in their field.
Conclusion
Wen-Zhang Lin's contributions to resistive memory technology are noteworthy, with several patents that reflect his innovative spirit. His work continues to influence the development of advanced memory devices, showcasing the importance of research and collaboration in technological advancements.