Tsinghua University

Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Zhang Lin

Meng-Fan Chang

Li-Ya Lai

Yu-Der Chih

Jonathan Tsung-Yung Chang

Chrong-Jung Lin

Ya-Chin King

Yun-Sheng Chen

Wang-Yi Lee

Cheng-Jun Lin

A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same

Resistive memory device and method for manufacturing with protrusion of electrode

The present disclosure provides a control circuit of a memory array. The control circuit includes a first switch and a set termination circuit. The first switch is connected between a first voltage source and a data line of a resistive memory cell of the memory array. The set termination circuit has a first terminal connected to a control terminal of the first switch and a second terminal connected to the data line of the resistive memory cell of the memory array. When a data line voltage of the data line decreases to be lower than a first voltage in a first duration of the resistive memory cell performing a set operation, the set termination circuit turns off the first switch to terminate the set operation by stopping providing the first voltage of the first voltage source to the data line.

Memory device

Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cell

Growing community of inventors

Hsinchu, Taiwan

Wen-Zhang Lin