The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Dec. 13, 2018
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Meng-Fan Chang, Taichung, TW;

Wen-Zhang Lin, Hsinchu, TW;

Li-Ya Lai, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0061 (2013.01); G11C 13/0064 (2013.01); G11C 13/0097 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

The present disclosure provides a control circuit of a memory array. The control circuit includes a first switch and a set termination circuit. The first switch is connected between a first voltage source and a data line of a resistive memory cell of the memory array. The set termination circuit has a first terminal connected to a control terminal of the first switch and a second terminal connected to the data line of the resistive memory cell of the memory array. When a data line voltage of the data line decreases to be lower than a first voltage in a first duration of the resistive memory cell performing a set operation, the set termination circuit turns off the first switch to terminate the set operation by stopping providing the first voltage of the first voltage source to the data line.


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