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Jonathan Tsung-Yung Chang

Hsinchu, Taiwan

Jonathan Tsung-Yung Chang

This inventor holds 119 USPTO granted patents and 30 published patent applications, primarily in Memory Devices (CPC class G11C11-419). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC Nanjing Company, Limited. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonathan Tsung-Yung Chang. Retrieved from https://idiyas.com/inventor/jonathan-tsung-yung-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 119 

% Patents Active = 87.4

Average Co-Inventor Count = 4.9

ph-index = 9

Forward Citations = 471(Granted Patents)

Forward Citations (Not Self Cited) = 358(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:

goldMedal119 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 115 
 
TSMC Nanjing Company, Limited
 patents
where one patent can have more than one assignee

Years Active: 2013-2026

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Areas of Expertise:
Memory Devices
Computing-In-Memory
Programmable Resistors
SRAM Architectures
Thermal Throttling
Integrated Circuits
Memory Circuits
Through-Silicon Via
Voltage Supply Selection
Memory Array Connections
Hybrid Computations
Backside Boost Capacitor
119 patents (USPTO):Explore Patents
1. 12755773 - Memory device (2026-10-06),
2. 12730610 - Integrated circuit with compute in-memory array and method of operating same (2026-09-08),
3. 12690191 - One-time-programmable memory devices and methods for forming the same (2026-07-21),
4. 12676181 - Memory circuits, memory structures, and methods for fabricating a memory device (2026-07-07),
5. 12562197 - Header circuit placement in memory device (2026-02-24),
6. 12555617 - Bit line logic circuit and method (2026-02-17),
7. 12541319 - Computing-in-memory device and method (2026-02-03),
8. 12426517 - Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same (2025-09-23),
9. 12424279 - Memory cell including programmable resistors with transistor components (2025-09-23),
10. 12412621 - Semiconductor device including distributed write driving arrangement (2025-09-09),
11. 12380946 - Memory computation method (2025-08-05),
12. 12348626 - Integrated circuit (IC) signatures with random number generator and one-time programmable device (2025-07-01),
13. 12340839 - Memory device and system (2025-06-24),
14. 12308303 - Integrated circuit die with memory macro including through-silicon via and method of forming the same (2025-05-20),
15. 12283336 - System for differentiated thermal throttling of memory and method of operating same (2025-04-21),

Title: The Innovative Journey of Jonathan Tsung-Yung Chang

Introduction:

Jonathan Tsung-Yung Chang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

Jonathan Tsung-Yung Chang's latest patents include cutting-edge advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, solidifying his reputation as a forward-thinker in the industry.

Career Highlights:

With a career spanning over two decades, Jonathan Tsung-Yung Chang has held key roles in various tech companies, leading research and development teams to create innovative solutions that have shaped the industry landscape.

Collaborations:

Throughout his career, Jonathan Tsung-Yung Chang has collaborated with leading universities, research institutions, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing that has propelled the industry forward.

Conclusion:

In conclusion, Jonathan Tsung-Yung Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a visionary inventor whose impact will be felt for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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