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For the Inventor, By the Inventor

Jonathan Tsung-Yung Chang

Hsinchu, Taiwan

Jonathan Tsung-Yung Chang

USPTO Granted Patents = 112 

Average Co-Inventor Count = 4.9

ph-index = 9

Forward Citations = 442(Granted Patents)

Forward Citations (Not Self Cited) = 358(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal112 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 97 
 
TSMC Nanjing Company, Limited
 patents
where one patent can have more than one assignee

Years Active: 2013-2025

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Areas of Expertise:
Memory Cell
Programmable Resistors
Resistive Memory Device
Semiconductor Device
In-Memory Computing
Integrated Circuit Signatures
Thermal Throttling
Sram-Based Cell
Through-Silicon Via
Low Voltage Memory
Memory Computation Circuit
Configurable Memory Storage
112 patents (USPTO):Explore Patents
1. 12426517 - Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same (2025-09-23),
2. 12424279 - Memory cell including programmable resistors with transistor components (2025-09-23),
3. 12412621 - Semiconductor device including distributed write driving arrangement (2025-09-09),
4. 12380946 - Memory computation method (2025-08-05),
5. 12348626 - Integrated circuit (IC) signatures with random number generator and one-time programmable device (2025-07-01),
6. 12340839 - Memory device and system (2025-06-24),
7. 12308303 - Integrated circuit die with memory macro including through-silicon via and method of forming the same (2025-05-20),
8. 12283336 - System for differentiated thermal throttling of memory and method of operating same (2025-04-21),
9. 12277319 - SRAM-based cell for in-memory computing and hybrid computations/storage memory architecture (2025-04-14),
10. 12260928 - Memory devices with backside boost capacitor and methods for forming the same (2025-03-25),
11. 12217790 - Memory array connections (2025-02-04),
12. 12183417 - Memory device and manufacturing method of the same (2024-12-31),
13. 12176063 - Computing-in-memory architecture (2024-12-24),
14. 12164882 - In-memory computation circuit and method (2024-12-10),
15. 12119052 - Low voltage memory device (2024-10-15),

Title: The Innovative Journey of Jonathan Tsung-Yung Chang

Introduction:

Jonathan Tsung-Yung Chang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

Jonathan Tsung-Yung Chang's latest patents include cutting-edge advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems, solidifying his reputation as a forward-thinker in the industry.

Career Highlights:

With a career spanning over two decades, Jonathan Tsung-Yung Chang has held key roles in various tech companies, leading research and development teams to create innovative solutions that have shaped the industry landscape.

Collaborations:

Throughout his career, Jonathan Tsung-Yung Chang has collaborated with leading universities, research institutions, and tech companies worldwide, fostering a culture of innovation and knowledge-sharing that has propelled the industry forward.

Conclusion:

In conclusion, Jonathan Tsung-Yung Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a visionary inventor whose impact will be felt for years to come.

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